Prof. Bonan Yan (燕博南), Ph.D. is an Assistant Professor at Institute for Artificial Intelligence, Peking University. He received his Ph.D. degree in Electrical and Computer Engineering from Duke University in 2020. His research focuses on artificial general intelligence processor chip design and integrated circuits design for emerging memory and computing-in-memory--primarily targeting at SRAM, RRAM, MRAM, PCM, flexible electronics, and monolithic 3D integration. He has published papers in top-tier international journals and conferences, including Nature, Nature Electronics, Nature Communications, ISSCC, IEDM and DAC. He was awarded the ACM SIGDA Outstanding New Faculty Award in 2024 and the CCF-Huawei Populus Euphratica Forest Fund Outstanding Proposal Award in Memory Systems from China Computer Federation (CCF). He serves as a TPC member for DAC, DATE, EDTM, etc.. His team developed a digital SRAM-based computing-in-memory AI processor chip that set a new world record for computing-in-memory energy efficiency at the time of its release. He is the co-inventor of first WASM hardware acceleartor processor and first fully-flexible compute-in-memory LSI chip.