Publication

2023

1. arXiv

   Probabilistic Compute-in-Memory Design For Efficient Markov Chain Monte Carlo Sampling

   Yihan Fu, Daijing Shi, Anjunyi Fan, and 4 more authors

   arXiv preprint arXiv:2307.10866, 2023

   Bib

   @article{fu2023probabilistic,
     title = {Probabilistic Compute-in-Memory Design For Efficient Markov Chain Monte Carlo Sampling},
     author = {Fu, Yihan and Shi, Daijing and Fan, Anjunyi and Yue, Wenshuo and Yang, Yuchao and Huang, Ru and Yan, Bonan},
     journal = {arXiv preprint arXiv:2307.10866},
     year = {2023}
   }

2. AICAS

   Live Demonstration: SRAM Compute-In-Memory Based Visual & Aural Recognition System

   Anjunyi Fan, Bo Hu, Zhonghua Jin, and 6 more authors

   In 2023 IEEE 5th International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2023

   Bib

   @inproceedings{fan2023live,
     title = {Live Demonstration: SRAM Compute-In-Memory Based Visual \& Aural Recognition System},
     author = {Fan, Anjunyi and Hu, Bo and Jin, Zhonghua and Han, Haiyue and Zhang, Yaojun and Yang, Yue and Yang, Yuchao and Yan, Bonan and Huang, Ru},
     booktitle = {2023 IEEE 5th International Conference on Artificial Intelligence Circuits and Systems (AICAS)},
     pages = {1--2},
     year = {2023},
     organization = {IEEE}
   }

3. GLSVLSI

   SRAM-Based Processing-In-Memory Design with Kullback-Leibler Divergence-Based Dynamic Precision Quantization

   Yanjun Li, Chunshan Zu, Bingqian Wang, and 5 more authors

   In Proceedings of the Great Lakes Symposium on VLSI 2023, 2023

   Bib

   @inproceedings{li2023sram,
     title = {SRAM-Based Processing-In-Memory Design with Kullback-Leibler Divergence-Based Dynamic Precision Quantization},
     author = {Li, Yanjun and Zu, Chunshan and Wang, Bingqian and Zhu, Zhenhua and Zhang, Yaojun and Duan, Ran and Li, Bing and Yan, Bonan},
     booktitle = {Proceedings of the Great Lakes Symposium on VLSI 2023},
     pages = {189--192},
     year = {2023}
   }

4. DATE

   STAR: An Efficient Softmax Engine for Attention Model with RRAM Crossbar

   Yifeng Zhai, Bing Li, Bonan Yan, and 1 more author

   In 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023

   Bib

   @inproceedings{zhai2023star,
     title = {STAR: An Efficient Softmax Engine for Attention Model with RRAM Crossbar},
     author = {Zhai, Yifeng and Li, Bing and Yan, Bonan and Wang, Jing},
     booktitle = {2023 Design, Automation \& Test in Europe Conference \& Exhibition (DATE)},
     pages = {1--2},
     year = {2023},
     organization = {IEEE}
   }

5. NCE

   Hadamard product-based in-memory computing design for floating point neural network training

   Anjunyi Fan, Yihan Fu, Yaoyu Tao, and 7 more authors

   Neuromorphic Computing and Engineering, 2023

   Bib

   @article{fan2023hadamard,
     title = {Hadamard product-based in-memory computing design for floating point neural network training},
     author = {Fan, Anjunyi and Fu, Yihan and Tao, Yaoyu and Jin, Zhonghua and Han, Haiyue and Liu, Huiyu and Zhang, Yaojun and Yan, Bonan and Yang, Yuchao and Huang, Ru},
     journal = {Neuromorphic Computing and Engineering},
     volume = {3},
     number = {1},
     pages = {014009},
     year = {2023},
     publisher = {IOP Publishing}
   }

6. FPGA

   Accelerating neural-ode inference on fpgas with two-stage structured pruning and history-based stepsize search

   Lei Cai, Jing Wang, Lianfeng Yu, and 3 more authors

   In Proceedings of the 2023 ACM/SIGDA International Symposium on Field Programmable Gate Arrays, 2023

   Bib

   @inproceedings{cai2023accelerating,
     title = {Accelerating neural-ode inference on fpgas with two-stage structured pruning and history-based stepsize search},
     author = {Cai, Lei and Wang, Jing and Yu, Lianfeng and Yan, Bonan and Tao, Yaoyu and Yang, Yuchao},
     booktitle = {Proceedings of the 2023 ACM/SIGDA International Symposium on Field Programmable Gate Arrays},
     pages = {177--183},
     year = {2023}
   }

2022

1. ASSCC

   A 28nm 57.6 TOPS/W Attention-based NN Processor with Correlative Computing-in-Memory Ring and Dataflow-reshaped Digital-assisted Computing-in-Memory Array

   Ruiqi Guo, Zhiheng Yue, Hao Li, and 8 more authors

   In 2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2022

   Bib

   @inproceedings{guo202228nm,
     title = {A 28nm 57.6 TOPS/W Attention-based NN Processor with Correlative Computing-in-Memory Ring and Dataflow-reshaped Digital-assisted Computing-in-Memory Array},
     author = {Guo, Ruiqi and Yue, Zhiheng and Li, Hao and Hu, Te and Wang, Yabing and Sun, Hao and Hsu, Jeng-Long and Zhang, Yaojun and Yan, Bonan and Liu, Leibo and others},
     booktitle = {2022 IEEE Asian Solid-State Circuits Conference (A-SSCC)},
     pages = {1--3},
     year = {2022},
     organization = {IEEE}
   }

2. DAC

   ASTERS: adaptable threshold spike-timing neuromorphic design with twin-column ReRAM synapses

   Ziru Li, Qilin Zheng, Bonan Yan, and 3 more authors

   In ACM/IEEE Design Automation Conference, 2022

   Bib

   @inproceedings{li2022asters,
     title = {ASTERS: adaptable threshold spike-timing neuromorphic design with twin-column ReRAM synapses},
     author = {Li, Ziru and Zheng, Qilin and Yan, Bonan and Huang, Ru and Li, Bing and Chen, Yiran},
     booktitle = {ACM/IEEE Design Automation Conference},
     pages = {1099--1104},
     year = {2022}
   }

3. TCAS-I

   VSDCA: A voltage sensing differential column architecture based on 1T2R RRAM array for computing-in-memory accelerators

   Zhaokun Jing, Bonan Yan, Yuchao Yang, and 1 more author

   IEEE Transactions on Circuits and Systems I: Regular Papers, 2022

   Bib

   @article{jing2022vsdca,
     title = {VSDCA: A voltage sensing differential column architecture based on 1T2R RRAM array for computing-in-memory accelerators},
     author = {Jing, Zhaokun and Yan, Bonan and Yang, Yuchao and Huang, Ru},
     journal = {IEEE Transactions on Circuits and Systems I: Regular Papers},
     volume = {69},
     number = {10},
     pages = {4028--4041},
     year = {2022},
     publisher = {IEEE}
   }

4. NCE

   Memristive devices based hardware for unlabeled data processing

   Zhuojian Xiao, Bonan Yan, Teng Zhang, and 2 more authors

   Neuromorphic Computing and Engineering, 2022

   Bib

   @article{xiao2022memristive,
     title = {Memristive devices based hardware for unlabeled data processing},
     author = {Xiao, Zhuojian and Yan, Bonan and Zhang, Teng and Huang, Ru and Yang, Yuchao},
     journal = {Neuromorphic Computing and Engineering},
     volume = {2},
     number = {2},
     pages = {022003},
     year = {2022},
     publisher = {IOP Publishing}
   }

5. EDL

   1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing

   Bingjie Dang, Ling Lv, Hong Wang, and 7 more authors

   IEEE Electron Device Letters, 2022

   Bib

   @article{dang20221,
     title = {1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing},
     author = {Dang, Bingjie and Lv, Ling and Wang, Hong and Cai, Lei and Yan, Bonan and Liu, Keqin and Xu, Liying and Hao, Yue and Huang, Ru and Yang, Yuchao},
     journal = {IEEE Electron Device Letters},
     volume = {43},
     number = {8},
     pages = {1223--1226},
     year = {2022},
     publisher = {IEEE}
   }

6. ISSCC

   A 1.041-Mb/MM 2 27.38-TOPS/W signed-INT8 dynamic-logic-based ADC-less SRAM compute-in-memory macro in 28nm with reconfigurable bitwise operation for AI and embedded applications

   Bonan Yan, Jeng-Long Hsu, Pang-Cheng Yu, and 8 more authors

   In 2022 IEEE International Solid-State Circuits Conference (ISSCC), 2022

   Bib

   @inproceedings{yan20221,
     title = {A 1.041-Mb/MM 2 27.38-TOPS/W signed-INT8 dynamic-logic-based ADC-less SRAM compute-in-memory macro in 28nm with reconfigurable bitwise operation for AI and embedded applications},
     author = {Yan, Bonan and Hsu, Jeng-Long and Yu, Pang-Cheng and Lee, Chia-Chi and Zhang, Yaojun and Yue, Wenshuo and Mei, Guoqiang and Yang, Yuchao and Yang, Yue and Li, Hai and others},
     booktitle = {2022 IEEE International Solid-State Circuits Conference (ISSCC)},
     volume = {65},
     pages = {188--190},
     year = {2022},
     organization = {IEEE}
   }

7. Adv. Mater.

   In-memory realization of eligibility traces based on conductance drift of phase change memory for energy-efficient reinforcement learning

   Yingming Lu, Xi Li, Bonan Yan, and 5 more authors

   Advanced Materials, 2022

   Bib

   @article{lu2022memory,
     title = {In-memory realization of eligibility traces based on conductance drift of phase change memory for energy-efficient reinforcement learning},
     author = {Lu, Yingming and Li, Xi and Yan, Bonan and Yan, Longhao and Zhang, Teng and Song, Zhitang and Huang, Ru and Yang, Yuchao},
     journal = {Advanced Materials},
     volume = {34},
     number = {6},
     pages = {2107811},
     year = {2022},
     publisher = {Wiley Online Library}
   }

8. ASP-DAC

   Heterogeneous Memory Architecture Accommodating Processing-in-Memory on SoC for AIoT Applications

   Kangyi Qiu, Yaojun Zhang, Bonan Yan, and 1 more author

   In 2022 27th Asia and South Pacific Design Automation Conference (ASP-DAC), 2022

   Bib

   @inproceedings{qiu2022heterogeneous,
     title = {Heterogeneous Memory Architecture Accommodating Processing-in-Memory on SoC for AIoT Applications},
     author = {Qiu, Kangyi and Zhang, Yaojun and Yan, Bonan and Huang, Ru},
     booktitle = {2022 27th Asia and South Pacific Design Automation Conference (ASP-DAC)},
     pages = {383--388},
     year = {2022},
     organization = {IEEE}
   }

2021

1. IEDM

   Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater Size Dependent C-doped Ge 2 Sb 2 Te 5 PCM Chip

   Longhao Yan, Xi Li, Yihang Zhu, and 6 more authors

   In 2021 IEEE International Electron Devices Meeting (IEDM), 2021

   Bib

   @inproceedings{yan2021uncertainty,
     title = {Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater Size Dependent C-doped Ge 2 Sb 2 Te 5 PCM Chip},
     author = {Yan, Longhao and Li, Xi and Zhu, Yihang and Yan, Bonan and Lu, Yingming and Zhang, Teng and Yang, Yuchao and Song, Zhitang and Huang, Ru},
     booktitle = {2021 IEEE International Electron Devices Meeting (IEDM)},
     pages = {28--2},
     year = {2021},
     organization = {IEEE}
   }